2SA638S

2SA638S

SKU: 2SA638S
2SA638S Transistor Silicon PNP CASE: TO92 MAKE: NEC
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer NEC
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 250m
C(ob) (F) 4.5p
Derate (Amb) (W/°C) 2.5m
hfe 120
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 130M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 130 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 65 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 590821
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