2SA646

SKU: 2SA646

2SA646 Transistor Silicon PNP CASE: TO202 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO202
Manufacturer	Mitsubishi
Vbr CBO	90
Vbr CEO	80
Max. PD (W)	7.0
Derate (Amb) (W/°C)	70m
t(f) Max. (S)	800n+
Max. hFE	300
Min hFE	20
Ic Max. (A)	800m
@Ic (test) (A)	300m
Icbo Max. @Vcb Max. (A)	1.0
Polarity	PNP
Tr Max. (s)	200n
R(sat) (Û)	2.0
Trans. Freq (Hz) Min.	70M
Oper. Temp (°C) Max.	125
@VCE (V)	4.0
Pinout Equivalence Number	4-27
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	7 W
Maximum Collector-Base Voltage \|Vcb\|	90 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.8 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	35 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	768755

Back