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2SA647
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2SA647

SKU: 2SA647
2SA647 Transistor Silicon PNP CASE: TO202 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon PNP
Case TO202
Manufacturer Mitsubishi
Vbr CBO 110
Vbr CEO 100
Max. PD (W) 7.0
Derate (Amb) (W/°C) 70m
t(f) Max. (S) 800n+
Max. hFE 300
Min hFE 20
Ic Max. (A) 800m
@Ic (test) (A) 300m
Icbo Max. @Vcb Max. (A) 1.0
Polarity PNP
Tr Max. (s) 200n
R(sat) (Û) 2.0
Trans. Freq (Hz) Min. 70M
Oper. Temp (°C) Max. 125
@VCE (V) 4.0
Pinout Equivalence Number 4-27
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 7 W
Maximum Collector-Base Voltage |Vcb| 110 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 768754
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