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2SA648
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2SA648

SKU: 2SA648
2SA648 Transistor Silicon PNP CASE: TO3 MAKE: NEC
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer NEC
Vbr CBO 120
Vbr CEO 80
Max. PD (W) 60
Derate (Amb) (W/°C) 480m
Max. hFE 120
Min hFE 30
Ic Max. (A) 7.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 556252
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