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2SA657A
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2SA657A

SKU: 2SA657A
2SA657A Transistor Silicon PNP CASE: TO3 MAKE: Toshiba
Product specifications
Equivalent 2SA657
Type Transistor Silicon PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 50
Derate (Amb) (W/°C) 400m
Max. hFE 300
Min hFE 30
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 500n
Trans. Freq (Hz) Min. 5.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 768752
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