2SA66

SKU: 2SA66

2SA66 Transistor Germanium PNP CASE: TO1 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Toshiba
Vbr CBO	18
Vbr CEO	18
Max. PD (W)	150m
C(ob) (F)	16p
Derate (Amb) (W/°C)	3.0m
hfe	80
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	12u
Polarity	PNP
Trans. Freq (Hz) Min.	7.5M
@VCE (test) (V)	.50
Oper. Temp (°C) Max.	75
@Ic (A)	100m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	75 °C
Collector Capacitance (Cc)	13 pF
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	584215

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