2SA670
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2SA670

SKU: 2SA670
2SA670 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Hitachi
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 25
Derate (Amb) (W/°C) 200m
Max. hFE 200
Min hFE 35
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 32 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 394765
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