| Weight |
0.01 kg
|
| Type |
Transistor |
| Manufacturer |
Toshiba |
| Case |
TO3 |
| Vbr CBO |
120 |
| Vbr CEO |
120 |
| Max. PD (W) |
100 |
| Derate (Amb) (W/°C) |
800m |
| Max. hFE |
140 |
| Min hFE |
40 |
| Ic Max. (A) |
12 |
| @Ic (test) (A) |
2.0 |
| Icbo Max. @Vcb Max. (A) |
100u |
| Polarity |
PNP |
| R(sat) (Û) |
330m |
| Trans. Freq (Hz) Min. |
6.0M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
100 W |
| Maximum Collector-Base Voltage |Vcb| |
110 V |
| Maximum Collector-Emitter Voltage |Vce| |
70 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
12 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
5 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SKU |
343261 |