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2SA679
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2SA679

SKU: 2SA679
2SA679 Semiconductor
Price: £11.99
+ VAT 20% for UK purchases
£11.99
Qty
+ VAT 20% for UK purchases
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Datasheet
2SA679 Datasheet
Product specifications
Type Transistor
Manufacturer Toshiba
Case TO3
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 100
Derate (Amb) (W/°C) 800m
Max. hFE 140
Min hFE 40
Ic Max. (A) 12
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
R(sat) (Û) 330m
Trans. Freq (Hz) Min. 6.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 110 V
Maximum Collector-Emitter Voltage |Vce| 70 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 343261
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