2SA709

SKU: 2SA709

2SA709 Transistor Silicon PNP CASE: X55-1 MAKE: NEC

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	X55-1
Manufacturer	NEC
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	300m
C(ob) (F)	7.5p
Derate (Amb) (W/°C)	2.4m
t(f) Max. (S)	270n-+
hfe	160
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Tr Max. (s)	100n-
t(stor) Max. (S)	200n-
Trans. Freq (Hz) Min.	280M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	140
@Ic (A)	10m
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	15 pF
Transition Frequency (ft):	140 MHz
Forward Current Transfer Ratio (hFE), MIN	160
SKU	768719

Back