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2SA715WT
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2SA715WT

SKU: 2SA715WT
2SA715WT Transistor Silicon PNP CASE: TO126 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Hitachi
Vbr CBO 35
Vbr CEO 35
Max. PD (W) 10
Max. hFE 320
Min hFE 35
Ic Max. (A) 1.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
R(sat) (Û) 500m
Trans. Freq (Hz) Min. 160M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 768714
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