2SA730

2SA730

SKU: 2SA730
2SA730 Transistor Silicon PNP CASE: SOT23 MAKE: Generic
Datasheet
2SA730 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Generic
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 600m
C(ob) (F) 6.0p
Derate (Amb) (W/°C) 6.0m
hfe 90
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 500m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SKU 343269
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