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Type | Transistor Silicon PNP | |
Manufacturer | Matsushita Electronics | |
Case | TO92 | |
Vbr CBO | 60 | |
Vbr CEO | 50 | |
Max. PD (W) | 1.0 | |
Derate (Amb) (W/°C) | 9.0m | |
Max. hFE | 340 | |
Min hFE | 60 | |
Ic Max. (A) | 1.5 | |
@Ic (test) (A) | 500m | |
Icbo Max. @Vcb Max. (A) | 100n | |
Polarity | PNP | |
Trans. Freq (Hz) Min. | 200M | |
Oper. Temp (°C) Max. | 135 | |
@VCE (V) | 10 | |
Pinout Equivalence Number | 3-15 | |
Surface Mounted Yes/No | NO | |
Maximum Collector Power Dissipation (Pc) | 1 W | |
Maximum Collector-Base Voltage |Vcb| | 60 V | |
Maximum Collector-Emitter Voltage |Vce| | 40 V | |
Maximum Emitter-Base Voltage |Veb| | 5 V | |
Maximum Collector Current |Ic max| | 1.5 A | |
Max. Operating Junction Temperature (Tj) | 160 °C | |
Transition Frequency (ft): | 100 MHz | |
Forward Current Transfer Ratio (hFE), MIN | 60 | |
SKU | 343276 |