2SA779K

SKU: 2SA779K

2SA779K Transistor Silicon PNP CASE: SOT33 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT33
Manufacturer	Hitachi
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	10
t(f) Max. (S)	550n-
Max. hFE	200
Min hFE	60
Ic Max. (A)	1.5
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	20u
Polarity	PNP
Tr Max. (s)	130n-
Trans. Freq (Hz) Min.	110M
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	90 pF
Transition Frequency (ft):	55 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	768684

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