2SA799
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2SA799

SKU: 2SA799
2SA799 Transistor Silicon PNP CASE: TO39 MAKE: Fujitsu
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Fujitsu
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 1.0
Derate (Amb) (W/°C) 5.7m
t(f) Max. (S) 110n+
Min hFE 54-
Ic Max. (A) 1.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 500n
Polarity PNP
Tr Max. (s) 45n
R(sat) (Û) 900
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 54
SKU 768667
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