The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA801
View detailed images (1)

2SA801

SKU: 2SA801
2SA801 Transistor Silicon PNP CASE: TO131 MAKE: NEC
Product specifications
Type Transistor Silicon PNP
Case TO131
Manufacturer NEC
Vbr CBO 20
Vbr CEO 12
Max. PD (W) 300m
C(ob) (F) 1.2p
Derate (Amb) (W/°C) 3.0m
hfe 90
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 4.0G
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 15m
Pinout Equivalence Number 4-29
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 2500 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 768666
Back