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2SA806
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2SA806

SKU: 2SA806
2SA806 Transistor Silicon PNP CASE: TO106 MAKE: Rohm Semiconductor
Datasheet
2SA806 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO106
Manufacturer Rohm Semiconductor
Vbr CEO 210
Max. PD (W) 150m
C(ob) (F) 8.0p
hfe 270=
Ic Max. (A) 30m
Polarity PNP
Trans. Freq (Hz) Min. 50M
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 210 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 6.5 pF
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 343286
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