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2SA811A
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2SA811A

SKU: 2SA811A
2SA811A Transistor - CASE: SOT23 MAKE: NEC
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Datasheet
2SA811A Datasheet
Product specifications
Equivalent 2SA811
Type Transistor Silicon PNP
Case SOT23
Manufacturer NEC
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 200m
C(ob) (F) 3.0p
Derate (Amb) (W/°C) 1.6m
hfe 500
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 130
SMD Transistor Code C15_C16_C17_C18
SKU 343288
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