2SA811C6

SKU: 2SA811C6

2SA811C6 Transistor Silicon PNP CASE: SOT23 MAKE: NEC

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT23
Manufacturer	NEC
Vbr CBO	50
Vbr CEO	45
Max. PD (W)	150m
Derate (Amb) (W/°C)	1.5m
hfe	200
Ic Max. (A)	30m
Icbo Max. @Vcb Max. (A)	50n
Polarity	PNP
@VCE (test) (V)	3.0
Oper. Temp (°C) Max.	125
@Ic (A)	500u
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	45 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.03 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	200
SKU	557694

Back