2SA813S4
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2SA813S4

SKU: 2SA813S4
2SA813S4 Transistor Silicon PNP CASE: SOT23 MAKE: NEC
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer NEC
Vbr CBO 60
Vbr CEO 45
Max. PD (W) 150m
Derate (Amb) (W/°C) 1.5m
hfe 100
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 557704
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