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2SA815
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2SA815

SKU: 2SA815
2SA815 Transistor Silicon PNP CASE: TO220 MAKE: Toshiba
Datasheet
2SA815 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Toshiba
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 15
Derate (Amb) (W/°C) 120m
Max. hFE 240
Min hFE 70
Ic Max. (A) 1.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 343290
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