The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA817A
View detailed images (12)

2SA817A

SKU: 2SA817A
2SA817A Transistor Silicon PNP CASE: TO92 MAKE: Toshiba
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • More pieces shipped in 14 days
?
Datasheet
2SA817A Datasheet
Product specifications
Equivalent 2SA817
Type Transistor Silicon PNP
Case TO92
Manufacturer Toshiba
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 800m
C(ob) (F) 14p
Derate (Amb) (W/°C) 5.0m
hfe 200
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 20
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 14 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 340983
Back