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2SA830S
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2SA830S

SKU: 2SA830S
2SA830S Transistor Silicon PNP CASE: Standard MAKE: Rohm Semiconductor
Datasheet
2SA830S Datasheet
Product specifications
Type Transistor Silicon PNP
Case Standard
Manufacturer Rohm Semiconductor
Vbr CEO 32
Max. PD (W) 300m
Min hFE 1.0k
Ic Max. (A) 1.5
Mat. Silicon Logic
Polarity PNP
Trans. Freq (Hz) Min. 200M
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 32 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 5000
SKU 343296
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