2SA835

SKU: 2SA835

2SA835 Transistor Silicon PNP CASE: TO202 MAKE: Sony

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO202
Manufacturer	Sony
Vbr CBO	140
Vbr CEO	140
Max. PD (W)	950m
C(ob) (F)	30p
Derate (Amb) (W/°C)	10m
hfe	150
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	200n
Polarity	PNP
Trans. Freq (Hz) Min.	45M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	125
@Ic (A)	100m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	7.9 W
Maximum Collector-Base Voltage \|Vcb\|	140 V
Maximum Collector-Emitter Voltage \|Vce\|	140 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	60 pF
Transition Frequency (ft):	22 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	394782

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