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2SA844E
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2SA844E

SKU: 2SA844E
2SA844E Transistor Silicon PNP CASE: SOT33 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case SOT33
Manufacturer Hitachi
Vbr CBO 55
Vbr CEO 55
Max. PD (W) 300m
C(ob) (F) 1.8p
hfe 800=
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 12
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 55 V
Maximum Collector-Emitter Voltage |Vce| 55 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 3.6 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 800
SKU 768632
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