2SA849
View detailed images (13)

2SA849

SKU: 2SA849
2SA849 Transistor Silicon PNP CASE: TO1 MAKE: Fujitsu
Product specifications
Type Transistor Silicon PNP
Case TO1
Manufacturer Fujitsu
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 1.0
Derate (Amb) (W/°C) 6.6m
Min hFE 150-
Ic Max. (A) 50m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
R(sat) (Û) 50
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 768626
Back