2SA876H

SKU: 2SA876H

2SA876H Transistor Silicon PNP CASE: TO18 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Equivalent	2SA876HC
Type	Transistor Silicon PNP
Case	TO18
Manufacturer	Hitachi
Vbr CBO	70
Vbr CEO	50
Max. PD (W)	350m
C(ob) (F)	10p
t(f) Max. (S)	300n-+
hfe	80
Ic Max. (A)	5.0
Icbo Max. @Vcb Max. (A)	500n
Polarity	PNP
Tr Max. (s)	35n-
t(stor) Max. (S)	250n-
Trans. Freq (Hz) Min.	110M
@VCE (test) (V)	3.0
Oper. Temp (°C) Max.	150
@Ic (A)	10m
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.35 W
Maximum Collector-Base Voltage \|Vcb\|	70 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SKU	590756

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