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2SA876HB
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2SA876HB

SKU: 2SA876HB
2SA876HB Transistor Silicon PNP CASE: TO18 MAKE: Hitachi
Product specifications
Equivalent 2SA876H
Type Transistor Silicon PNP
Case TO18
Manufacturer Hitachi
Vbr CBO 70
Vbr CEO 50
Max. PD (W) 350m
C(ob) (F) 10p
t(f) Max. (S) 300n-+
hfe 170
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 500n
Polarity PNP
Tr Max. (s) 35n-
t(stor) Max. (S) 250n-
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 170
SKU 1279573
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