2SA880

SKU: 2SA880

2SA880 Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics

Datasheet

2SA880 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT33
Manufacturer	Matsushita Electronics
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	150m
Derate (Amb) (W/°C)	1.5m
hfe	1.0k=
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	125
@Ic (A)	2.0m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	8 pF
Transition Frequency (ft):	120 MHz
Forward Current Transfer Ratio (hFE), MIN	700
SKU	394792

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