2SA900

SKU: 2SA900

2SA900 Transistor Silicon PNP CASE: TO126 MAKE: Matsushita Electronics

Datasheet

2SA900 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	Matsushita Electronics
Vbr CBO	20
Vbr CEO	18
Max. PD (W)	1.2
Derate (Amb) (W/°C)	9.6m
Max. hFE	470
Min hFE	90
Ic Max. (A)	2.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	200M
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	4 W
Maximum Collector-Base Voltage \|Vcb\|	18 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	90
SKU	80579

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