2SA911

2SA911

SKU: 2SA911
2SA911 Transistor Silicon PNP CASE: TO39 MAKE: Sony
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Sony
Vbr CBO 850
Vbr CEO 550
Max. PD (W) 8.0
Derate (Amb) (W/°C) 84m
t(f) Max. (S) 850n
Max. hFE 300
Min hFE 30
Ic Max. (A) 100m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 500n
R(sat) (Û) 300
Trans. Freq (Hz) Min. 9.0M
Oper. Temp (°C) Max. 125
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.47 W
Maximum Collector-Base Voltage |Vcb| 850 V
Maximum Collector-Emitter Voltage |Vce| 850 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 16 pF
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 579185
Back