2SA912

SKU: 2SA912

2SA912 Transistor Silicon PNP CASE: TO92 MAKE: Matsushita Electronics

Datasheet

2SA912 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Matsushita Electronics
Vbr CBO	150
Vbr CEO	150
Max. PD (W)	750m
Derate (Amb) (W/°C)	6.9m
hfe	150
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	200M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	135
@Ic (A)	10m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.75 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	150
SKU	343308

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