| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
SOT23 |
| Manufacturer |
NEC |
| Vbr CBO |
60 |
| Vbr CEO |
40 |
| Max. PD (W) |
150m |
| C(ob) (F) |
7.5p |
| Derate (Amb) (W/°C) |
1.2m |
| t(f) Max. (S) |
270n-+ |
| hfe |
80 |
| Ic Max. (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Tr Max. (s) |
100n- |
| t(stor) Max. (S) |
200n- |
| Trans. Freq (Hz) Min. |
280M |
| @VCE (test) (V) |
1.0 |
| Oper. Temp (°C) Max. |
125 |
| @Ic (A) |
10m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.15 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
40 V |
| Maximum Emitter-Base Voltage |Veb| |
8 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Collector Capacitance (Cc) |
13 pF |
| Transition Frequency (ft): |
280 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
90 |
| SKU |
343314 |