The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA966

2SA966

SKU: 2SA966
2SA966 Transistor Silicon PNP CASE: TO92L MAKE: Toshiba
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 35 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2SA966 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO92L
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 900m
C(ob) (F) 30p
Derate (Amb) (W/°C) 7.2m
hfe 180
Ic Max. (A) 1.5
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 120M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 500m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.9 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 20151
Back