2SA966O

2SA966O

SKU: 2SA966O
2SA966O Transistor Silicon PNP CASE: TO98 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO98
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 900m
C(ob) (F) 30p
hfe 200=
Ic Max. (A) 1.5m
Polarity PNP
Trans. Freq (Hz) Min. 120M
@VCE (test) (V) 2.0
@Ic (A) 500m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.9 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 394809
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