2SA967

SKU: 2SA967

2SA967 Transistor Silicon PNP CASE: TO220 MAKE: Toshiba

Datasheet

2SA967 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Toshiba
Vbr CBO	15
@Freq. (test)	1.0G
@Ic (A)	3.0m
@Ic (A)	5.0m
Mat.	Silicon Logic
Noise Fig.	3.5
Oper. Gain Typ (S21)	9.5
f(osc) Max. (Hz)	4.0G
Polarity	PNP
PD Max. (W)	150m
S11 Deg. (Typ)	-174
S11 Mag Typ.	.367
S22 Deg. Typ.	-40
S22 Mag Typ.	.450
@VDS (VCE) (test) (V)	10
Coll. (or drain) Current Max.	30m
@Freq. (test)	1.0G
@VCE (test)	5.0
Oper. Temp (°C) Max.	125
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	15 V
Maximum Collector-Emitter Voltage \|Vce\|	8 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	0.03 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	0.8 pF
Transition Frequency (ft):	4000 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	343315

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