2SB1000

SKU: 2SB1000

2SB1000 Transistor Silicon PNP CASE: SOT89 MAKE: Hitachi

Datasheet

2SB1000 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT89
Manufacturer	Hitachi
Vbr CBO	25
Vbr CEO	20
Max. PD (W)	1.0
Min hFE	85
Ic Max. (A)	1
Icbo Max. @Vcb Max. (A)	0.1u
@Temp. (test) (°C)	50
VRRM	1.0k
Polarity	PNP
1-Cycle Surge Current (A)	50
@Temp. (test) for Vf)	25
Vf Max.	1.0
Ir @25°C	10u
I(out) (If AVG) Max.	2.0
Trans. Freq (Hz) Min.	350M
@Volts (test) (V)	1.0k
@If (test)	1.0
Oper. Temp (°C) Max.	150
@VCE (V)	20i
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	165 °C
Transition Frequency (ft):	175 MHz
Forward Current Transfer Ratio (hFE), MIN	140
SKU	343325

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