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2SB1000A
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2SB1000A

SKU: 2SB1000A
2SB1000A Transistor Silicon PNP CASE: SP0 MAKE: Generic
Datasheet
2SB1000A Datasheet
Product specifications
Type Transistor Silicon PNP
Case SP0
Manufacturer Hitachi Semiconductor
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 1.0
Min hFE 85
Ic Max. (A) 1
Icbo Max. @Vcb Max. (A) 0.1u
Polarity PNP
Trans. Freq (Hz) Min. 350M
Oper. Temp (°C) Max. 150
@VCE (V) 20i
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 165 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 140
SKU 343326
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