2SB1001

SKU: 2SB1001

2SB1001 Transistor Silicon PNP CASE: SP0 MAKE: Hitachi

Datasheet

2SB1001 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SP0
Manufacturer	Hitachi
Vbr CBO	20
Vbr CEO	16
Max. PD (W)	1.0
Min hFE	100
Ic Max. (A)	2.0
@Ic (test) (A)	0
Icbo Max. @Vcb Max. (A)	0.1u
Polarity	PNP
Trans. Freq (Hz) Min.	80M
Oper. Temp (°C) Max.	150
@VCE (V)	16
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	165 °C
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	140
SKU	343327

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