2SB1012K

SKU: 2SB1012K

2SB1012K Transistor Silicon PNP CASE: SOT32 MAKE: Hitachi

Datasheet

2SB1012K Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT32
Manufacturer	Hitachi
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	20
Min hFE	2k
Ic Max. (A)	1.5
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Oper. Temp (°C) Max.	150
@VCE (V)	3.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	2000
SKU	343332

Back