2SB1015O

SKU: 2SB1015O

2SB1015O Transistor Silicon PNP CASE: SOT186 MAKE: Toshiba

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

Qty

Product specifications

Weight	0.01 kg
Equivalent	2SB1015
Type	Transistor Silicon PNP
Case	SOT186
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	25
Derate (Amb) (W/°C)	.20
Max. hFE	200
Min hFE	60
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	150 pF
Transition Frequency (ft):	9 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	585893

Back