The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1015Y
View detailed images (12)

2SB1015Y

SKU: 2SB1015Y
2SB1015Y Transistor Silicon PNP CASE: SOT186 MAKE: Toshiba
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
Product specifications
Equivalent 2SB1015
Type Transistor Silicon PNP
Case SOT186
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 25
Derate (Amb) (W/°C) .20
Max. hFE 200
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 150 pF
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 585894
Back