2SB1017O
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2SB1017O

SKU: 2SB1017O
2SB1017O Transistor Silicon PNP CASE: SOT186 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case SOT186
Manufacturer Toshiba
Polarity PNP
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 130 pF
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 585895
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