2SB1018A
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2SB1018A

SKU: 2SB1018A
2SB1018A Transistor Silicon PNP CASE: SOT186A MAKE: Toshiba
Datasheet
2SB1018A Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT186A
Manufacturer Toshiba
Polarity PNP
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 250 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 343335
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