2SB1018O

SKU: 2SB1018O

2SB1018O Transistor Silicon PNP CASE: SOT186 MAKE: Toshiba

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

Qty

Product specifications

Weight	0.01 kg
Equivalent	2SB1018
Type	Transistor Silicon PNP
Case	SOT186
Manufacturer	Toshiba
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	30
Derate (Amb) (W/°C)	240m
Max. hFE	240
Min hFE	70
Ic Max. (A)	7.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	PNP
Tr Max. (s)	400n
Oper. Temp (°C) Max.	140
@VCE (V)	1.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	250 pF
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	585898

Back