2SB1021

SKU: 2SB1021

2SB1021 Transistor Silicon PNP CASE: TO220 MAKE: Toshiba

Datasheet

2SB1021 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Toshiba
Vbr CEO	80
Max. PD (W)	30
Max. hFE	15k
Min hFE	2.0k
Ic Max. (A)	7.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	PNP
Derate Above 25°C	240m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	8000
SKU	116942

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