2SB1026

SKU: 2SB1026

2SB1026 Transistor Silicon PNP CASE: SP0 MAKE: Hitachi

Datasheet

2SB1026 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SP0
Manufacturer	Hitachi
Vbr CBO	120
Vbr CEO	100
Max. PD (W)	1.0
Min hFE	60
Ic Max. (A)	1
@Ic (test) (A)	0
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	140M
Oper. Temp (°C) Max.	150
@VCE (V)	100
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	70 MHz
Forward Current Transfer Ratio (hFE), MIN	110
SKU	343338

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