2SB1036

SKU: 2SB1036

2SB1036 Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics

Datasheet

2SB1036 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT33
Manufacturer	Matsushita Electronics
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	300m
Derate (Amb) (W/°C)	3.0m
hfe	700=
Ic Max. (A)	20m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	125
@Ic (A)	2.0m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	0.02 A
Max. Operating Junction Temperature (Tj)	185 °C
Forward Current Transfer Ratio (hFE), MIN	200
SKU	343347

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