| 2SB1045 Datasheet |
| Type | Transistor Silicon PNP | |
| Case | SOT89 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 120 | |
| Vbr CEO | 100 | |
| Max. PD (W) | 1.0 | |
| Min hFE | 60 | |
| Ic Max. (A) | 50m | |
| @Ic (test) (A) | 0 | |
| Icbo Max. @Vcb Max. (A) | 10u | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 140M | |
| Oper. Temp (°C) Max. | 150 | |
| @VCE (V) | 100 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | YES | |
| Maximum Collector Power Dissipation (Pc) | 1 W | |
| Maximum Collector-Base Voltage |Vcb| | 120 V | |
| Maximum Emitter-Base Voltage |Veb| | 20 V | |
| Maximum Collector Current |Ic max| | 0.05 A | |
| Max. Operating Junction Temperature (Tj) | 165 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 160 | |
| SKU | 343350 | |