| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
SOT89 |
| Manufacturer |
Hitachi |
| Vbr CBO |
120 |
| Vbr CEO |
120 |
| Max. PD (W) |
20 |
| t(f) Max. (S) |
2.0u-+ |
| Max. hFE |
30k |
| Min hFE |
2k |
| Ic Max. (A) |
1.5 |
| @Ic (test) (A) |
0 |
| Icbo Max. @Vcb Max. (A) |
100u |
| Polarity |
PNP |
| Tr Max. (s) |
0.5u- |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
120i |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
1 W |
| Maximum Collector-Base Voltage |Vcb| |
180 V |
| Maximum Emitter-Base Voltage |Veb| |
20 V |
| Maximum Collector Current |Ic max| |
0.05 A |
| Max. Operating Junction Temperature (Tj) |
165 °C |
| Transition Frequency (ft): |
70 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
160 |
| SKU |
542865 |