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2SB1050
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2SB1050

SKU: 2SB1050
2SB1050 Transistor Silicon PNP CASE: SOT32 MAKE: Matsushita Electronics
Datasheet
2SB1050 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT32
Manufacturer Matsushita Electronics
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 1.0
Derate (Amb) (W/°C) 8.0m
Max. hFE 625
Min hFE 90
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Polarity PNP
Trans. Freq (Hz) Min. 120M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 160
SKU 116499
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